Sharif Digital Repository

In this paper, a novel microfabrication process of a six DOF thermal compliant nanopositioner is presented. The microfabrication process was based on bulk micromachining process. By using this process some important operational restrictions which are usually created by surface micromachining were removed. Moreover, this novel process does not need SOI wafers and needs only ordinary wafers. Therefore, it makes microfabrication process cheaper than surface micromachining processes where SOI wafer should be used. This method is completely appropriate for microactuators which have 120 degree misalignment. Finally, a primary test by using interferometer method was used to test connection of... 

Due to the strong magnetic anisotropy energy, the L10 FePt nanocrystals are considered as one of promising candidates for magnetic recording media with ultrahigh densities. The surfaces of Si and SiO2 wafers have been covered by FePt nanoparticles (NPs) and heated at 600 °C for 1 h to form the L10 phase. Bonding of NPs with the SiO2 surface in the presence of magnetic field during annealing process controls the L10 FePt NPs size and their uniform surface distribution. In the presence of perpendicular magnetic field to the surface, the size of NPs obtains up to 30 nm with coercivity of 5.8 kOe and in parallel magnetic field, the NPs size reaches to 45 nm with coercivity of 2.9 kOe. These... 

Carbon nanotubes were electrodeposited in acetonitrile solution at room temperature using Cu, and Fe-Ni nanoparticles as nucleation sites on HF-etched Si(100) wafer substrate. The electrochemical behavior of the deposition was investigated by voltammetry and chronoamperometry techniques. In order to obtain the optimum growth condition, the deposition critical parameters including current density range, potential and time were studied and calculated. Carbon nanotubes with approximate external diameter of 40-100 nm were fabricated under potentiostatic condition and diffusion control at - 20 V in 4-6 h. The film crystallinity was investigated by means of X-ray diffraction and the tubes... 

Bismuth ferrite, BiFeO 3, is almost the only material that is simultaneously magnetic and a strong ferroelectric at room temperature. As a result it is the most investigated multiferroic material. In this study, bismuth ferrite thin films were deposited on silicon wafer (100) and glass by pulsed-laser deposition and their structural, optical, and electrical properties were measured. Our study indicates that Bi richness in these films can stimulate formation of oxygen vacancy in the system which in its turn leads to delocalization of carriers and a more intensified photoconductivity response. X-ray diffraction analysis revealed formation of BiFeO 3 (BFO), but it also showed formation of Bi 2O... 

The conventional solar cell architectures include a p-n junction of c-Si sandwiched by rear and front contacts. The conventional approach features a complex as well as expensive procedure. Here, we propose a new architecture for p-n heterojunction solar cells prepared by a simple and cost-effective procedure. In this regard, (1) a silicon wafer underwent surface treatment through electrochemical anodization. To prepare a stick junction, (2) photoactive TiO2 nanoparticles were deposited over the porous layer by electrophoretic technique. Finally, (3) indium tin oxide (ITO) was sputtered. During the fabrication steps, we examined various anodization times ranging from 6 to 12 min to study the... 

In this paper, a novel microfabrication process of a six DOF thermal compliant nanopositioner is presented. The microfabrication process was based on bulk micromachining process. By using this process some important operational restrictions which are usually created by surface micromachining were removed. Moreover, this novel process does not need SOI wafers and needs only ordinary wafers. Therefore, it makes microfabrication process cheaper than surface micromachining processes where SOI wafer should be used. This method is completely appropriate for microactuators which have 120 degree misalignment. Finally, a primary test by using interferometer method was used to test connection of... 

We have investigated hydrogen sensing properties of electrodeposited Pd clusters on macroporous silicon substrates. Porous layer was prepared by electrochemical etching of p-type silicon (100) wafer in organic electrolyte DMF (dimethylformamide) diluted by HF (%95 Vol. %). The deposition of Pd was carried out by linear voltammetry (LV) technique. This technique was taken for reduction of palladium ions in the potential range from 0.4 V to -1 V vs. SCE, at the scan rate of 20 mV s-1. Some samples were annealed at 300°C for an hour in air to study the effect of heat treatment on their gas sensitivity. Surface structural and chemical properties of the samples were characterised using Scanning... 

A simple process for the chemical vapor deposition of ultra SD single-wall carbon nanotubes has been developed. In this process, an iron nitrate nonahydrate solution in isopropyl alcohol with a concentration of (400 μgr/milt) was used to catalyst nanoparticle formation on an oxidized silicon wafer. The oxide on the substrate was made of a thick layer of wet oxide sandwiched between two thin layers of dry oxide. The process results in semiconducting Single-Walled carbon Nano Tubes (SWNTs) with diameters of less than 0.7 nm and more than a 1 ev band gap energy, which are amongst the smallest diameters of SWNTs ever reported. © Sharif University of Technology, June 2009  

This paper presents an investigation of the effects of tool rake angle and nose radius on the surface quality of ultraprecision diamond-turned porous silicon. The results showed that as rake angle decreases, the high-stress field induced by the tool edge increases, causing microcracks to propagate extensively near the pore walls. As a result, the ductile-machined areas shrank under a negative tool rake angle. On the other hand, brittle fracture occurred around pores released cutting pressure significantly. These trends of rake angle effects are distinctly different from those in the cutting of non-porous silicon. Finite element simulation of stress in the cutting area agreed with the... 

This paper presents an investigation of the effects of tool rake angle and nose radius on the surface quality of ultraprecision diamond-turned porous silicon. The results showed that as rake angle decreases, the high-stress field induced by the tool edge increases, causing microcracks to propagate extensively near the pore walls. As a result, the ductile-machined areas shrank under a negative tool rake angle. On the other hand, brittle fracture occurred around pores released cutting pressure significantly. These trends of rake angle effects are distinctly different from those in the cutting of non-porous silicon. Finite element simulation of stress in the cutting area agreed with the... 

Purpose: The morphological stability of silicon single crystal wafers was investigated, after performing cleaning surface treatments based on moderate temperature annealing and plasma sputtering. Methods: The wafer surfaces were measured by Tapping mode atomic force microscopy in air, before and after the different treatments. The 3D images were segmented by watershed algorithm identifying the local peaks, and the stereometric parameters were extracted thereof. The analysis of variance allowed to better assess the statistically significant differences. Results: All the resulting quantities were critically discussed. It appeared that the different cleaning treatments affected differently the... 

Nowadays networks-on-chip are emerging as a hot topic in IC designs with high integration. In addition to popular mesh and torus topologies, other structures can also be considered especially in 3D VLSI design. The shuffle-exchange topology is one of the popular interconnection architectures for multiprocessors due to its scalability and self-routing capability. By vertically stacking two or more silicon wafers, connected with a high-density and high-speed interconnect, it is now possible to combine multiple active device layers within a single IC. In this paper we propose an efficient three dimensional layout for a novel 2D mesh structure based on the shuffle-exchange topology. Simulation... 

Porous silicon samples were obtained from p+- and n-type silicon wafers. Gas sensing measurements showed that the electrical conductivity of porous Si on p+- and n-type wafers increases strongly and decreases weakly in the presence of methanol gas, respectively. Scanning tunneling spectroscopy (STS) indicates that the adsorption of methanol on the surface of n-porous silicon decreases the average density of states especially in the band gap. Fourier transform infrared (FTIR) spectroscopy reveals that after methanol exposure partial surface oxidation occurs which produces electron traps as well as methanol adsorption on the porous surfaces. These observations imply that the number of... 

Porous silicon (PS) is widely utilized in gas sensors. Palladium is a good choice to sensitize the surface of PS to hydrogen. Ideally for highest sensitivity of the sensor, all the pores of PS should be completely covered with palladium. Rutherford backscattering spectroscopy (RBS) technique is routinely used to determine depth profile of elements in thin layers. By using microbeam analysis as a complementary technique, we clearly observed the lateral image of penetrated Pd in depth. In this work, we used electrochemically anodized-silicon wafer doped with Pd by the electroless process. In our analysis, we intentionally characterized both the area of PS where Electric Field is applied during... 

In this study, the effects of milling time, chemical composition and heat treatment on microstructure and magnetic properties of nanocrystalline Fe-Si (6.5-25 at.% Si) alloys prepared by mechanical alloying have been investigated. The results show that increasing the milling time or the Si content, decreases the lattice parameter and increases the internal microstrain. The prepared powders mainly consist of micron-sized particles with an average grain size of less than 20 nm. The specific saturation magnetization values are slightly less than those of single crystal or conventional Fe-Si alloys and decrease as Si content increases. The coercive force values of the nanocrystalline as-milled... 

Nowadays networks-on-chip are emerging as a hot topic in IC designs with high integration. Much research has been done in this field of study recently, e.g. in routing algorithms, switching methods, VLSI Layout, and effects of resource allocation on system performance. On the other hand, three-dimensional integrated circuits allow a time-warp for Moore's Law. By vertically stacking two or more silicon wafers, connected with a high-density, high-speed interconnect, it is now possible to combine multiple active device layers within a single IC. In this paper, we examine performance and power consumption in a three dimensional network-on-chip structure under different types of traffic loads,... 

This study aims at investigating the effect of the substrate material on growth mechanism and also microstructure of Ta2O5 thin films. For this purpose, atomic force microscopy, scanning electron microscopy, and interferometry analyses were implemented to reveal the influence of silicon wafer and amorphous BK7 glass substrates on the nucleation and growth mechanisms of Ta2O5 thin films deposited via the radio frequency magnetron sputtering technique. Results indicated that those films with finer morphologies had relatively higher nucleation densities. Compared with BK7 glass substrate, crystals formed on the silicon wafer were shown to be finer and had lower mean areas in more nucleation... 

The coefficient of performance (COP) of a photovoltaic panel or module is defined as the ratio of the total electrical energy produced by the panel during its life to the total energy spent for its manufacture. All processes involved for the manufacture of photovoltaic panels were considered and the energy spent per unit mass of the final product during each process was determined. The total electrical energy spent for the manufacture of a photovoltaic module of 1×0.5 m dimensions, employing 340 micron wafers, with the net wafer area of 0.36 m2, was then determined. Monocrystalline and multicrystalline silicon cells were employed. It was found that for the manufacture of the PV module... 

Accelerometers that work based on intensity modulation of light are more sensitive, economically feasible, and have a simpler fabrication process compared to wavelength modulation. A micro-opto-electro-mechanical-system accelerometer based on intensity modulation of light is designed and fabricated. A movable shutter that is attached to the proof mass is designed to change the intensity of light. Moreover, the mechanical part is designed to improve the overall sensitivity and linear behavior in the measurement range. The designed accelerometer is fabricated by a deep-reactive-ion-etching (DRIE) process. The DRIE process used in this report is based on a Bosch-like process, which uses SF 6... 

This study aims at investigating the effect of the substrate material on growth mechanism and also microstructure of Ta2O5 thin films. For this purpose, atomic force microscopy, scanning electron microscopy, and interferometry analyses were implemented to reveal the influence of silicon wafer and amorphous BK7 glass substrates on the nucleation and growth mechanisms of Ta2O5 thin films deposited via the radio frequency magnetron sputtering technique. Results indicated that those films with finer morphologies had relatively higher nucleation densities. Compared with BK7 glass substrate, crystals formed on the silicon wafer were shown to be finer and had lower mean areas in more nucleation...