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Design of High Power High Frequency Amplifiers with Gaas Technology Process in 12-18 Ghz Frequency Band

Babakrpur Nalousi, Esmail | 2012

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  1. Type of Document: M.Sc. Thesis
  2. Language: Farsi
  3. Document No: 44314 (05)
  4. University: Sharif University of Technology
  5. Department: Electrical Engineering
  6. Advisor(s): Medi, Ali
  7. Abstract:
  8. Power Amplifiers are key components in new modern communication systems such as space and airborne applications, point to point networks and phase array modules. There are miscellaneous challenges in designing power amplifiers based on application and type of the system; high power, gain, bandwidth, linearity, efficiency, reliability, cost and size. Compromising among existence trade-offs is the state of the art for designing PAs. Meanwhile, technology improvements pay the way toward developing appropriate process in the realm of cost, cut-off frequency, voltage breakdown, thermal and reliance features. Throughout this thesis, challenges in designing high power amplifiers in the pHEMT GaAs process are discussed. Choosing the appropriate substrate in regards with dispersion, loss,operation frequency, high frequency disturbance modes and ease of integration, is the first step on these designs. Topology selection, class of biasing , stability in small and large signal are performed to prepare transistors for obtaining the optimum load through Load Pull and Source Pull simulations in the right conditions. Broadband matching networks are designed in the X and Ku frequency bands respecting proposed design flow chart. Besides academic knowledge for designing, there is practical knowledge that leads to successful design; Testing precautions vigilantly were considered in designing high frequency PAs. Foremost points in setting up measurement elements and finally results are presented. In addition to class AB driver and high power amplifiers, an asymmetric Doherty power amplifier with two-stage auxiliary paths were presented along with analytical analysis demonstrating its superior performance. All blocks in the DPA are adjusted so that produces an integrated, linear, high efficient and high frequency DPA. Furthermore, in the final chapter of this thesis, a class F and dual band class F amplifiers are designed in 5.5 GHz and 5&12 GHz respectively
  9. Keywords:
  10. Simulation ; High Power Amplifier (HPA) ; Reliability ; Stability ; Efficiency ; Broadband Matching Network ; Doherty Power Amplifier (DPA) ; Dual Band Power Amplifier ; Pseudo High Electron Mobility Field Effect Transistor (pHEMT)

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