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Low-frequency Model for Long-channel Monolayer Transistors

Omdeh Ghiasi, Hesam | 2019

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  1. Type of Document: Ph.D. Dissertation
  2. Language: Farsi
  3. Document No: 52105 (05)
  4. University: Sharif University of Technology
  5. Department: Electrical Engineering
  6. Advisor(s): Safarian, Amin Ghasem; Pourfath, Mahdi
  7. Abstract:
  8. Transistors’ miniaturization and advent of short-channel effects causes searching for another devices with least adverse characteristics in short channels. Among all the considered devices, monolayer transistors attracted the attention. Although most of the papers in literature focused on the physical phenomenon of the device, circuit design of these transistors have been overlooked. Most of the papers related to monolayer transistors did not explain the design methodology of their circuits and they confined their work just to the report of the circuits constructed with 2D-based transistors. In order to take advantage of 2D materials in electronic circuits, simple modelling for hand-calculations of 2D materials seems essential. In this work, a simple compact model of the operational regions of semiconductor 2D materials is developed and applied to an MoS2 transistor as a case study. The proposed model is similar to wellknown MOSFET model, in order to fill up the gap between circuit designers and device engineers. Furthermore, some non-ideal effects such as mobility degradation has been considered in our model. Finally, for verification of our model, a few digital and analog circuits have been designed and analysed with the aid of our proposed model and the results were compared with the accurate compact model of the monolayer transistors. For instance, a mixer with conversion gain of -8.22dB and IIP3=-3.4dB and LO power of -10dBm, a ring oscillator with period of 224ns and an inverter with small signal gain of 63 are designed. Furthermore, a comparison between our design and previously designed circuits with monolayer transistors accomplished in order to shed light on the application of our model
  9. Keywords:
  10. Two Dimentional Transistors ; TMDC-based Transistors ; Monolayer Transistors ; Low Frequency Modeling

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