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The effects of a magnetic barrier and a nonmagnetic spacer in tunnel structures

Shokri, A. A ; Sharif University of Technology | 2004

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  1. Type of Document: Article
  2. DOI: 10.1088/0953-8984/16/25/006
  3. Publisher: 2004
  4. Abstract:
  5. The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and the nearly-free-electron approximation the dependence of the tunnel magnetoresistance (TMR) and electron-spin polarization on the nonmagnetic layer thickness and the applied bias voltage are studied theoretically. The TMR and spin polarization show an oscillatory behaviour as a function of the spacer thickness and the bias voltage. The oscillations originate from the quantum well states in the spacer, while the existence of the magnetic barrier gives rise to a strong spin polarization and high values of the TMR. Our results may be useful for the development of spin electronic devices based on coherent transport
  6. Keywords:
  7. Electric potential ; Polarization ; Magnetoresistance ; Magnetization ; Ferromagnetic materials ; Electrons ; Electrodes ; Electric resistance
  8. Source: Journal of Physics Condensed Matter ; Volume 16, Issue 25 , 2004 , Pages 4455-4463 ; 09538984 (ISSN)
  9. URL: https://iopscience.iop.org/article/10.1088/0953-8984/16/25/006