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Design and simulation of a high power single mode 1550nm InGaAsP VCSELs

Faez, R ; Sharif University of Technology

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  1. Type of Document: Article
  2. DOI: 10.1587/elex.8.1096
  3. Abstract:
  4. In the present work, a new structure of vertical cavity surface emitting laser (VCSEL) is designed and simulated. In this structure, InGaAsP is used as the active region which is sandwiched between GaAs/AlGaAs distributed bragg mirror at the top of structure and GaAs/AlAs distributed bragg mirror at the bottom. In this work, the hole etching depth was continued down to the top of lower spacer layer while in the previous work the hole etching depth was only down to top of the upper spacer. In this way, the threshold current decrement of 76.52% and increment the power by 28% from 5mW to 6.4mW at bias current of 9mA was achieved. In this paper, device characteristics such as light power versus electrical current and voltage versus current are simulated and compared with the previous work
  5. Keywords:
  6. Design ; High power ; VCSEL ; Active regions ; Design and simulation ; Device characteristics ; Distributed bragg mirrors ; Electrical current ; GaAs ; GaAs/AlGaAs ; High-power ; Hole etching ; InGaAsP ; Light power ; Single mode ; Spacer layer ; Threshold currents ; Vertical-cavity surface emitting laser ; Etching ; Mirrors ; Surface emitting lasers ; Surface structure ; Current voltage characteristics
  7. Source: IEICE Electronics Express ; Volume 8, Issue 13 , 2011 , Pages 1096-1101 ; 13492543 (ISSN)
  8. URL: http://ci.nii.ac.jp/naid/130000760990