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A 3D analytical modeling of tri-gate tunneling field-effect transistors

Marjani, S ; Sharif University of Technology | 2016

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  1. Type of Document: Article
  2. DOI: 10.1007/s10825-016-0843-0
  3. Publisher: Springer New York LLC , 2016
  4. Abstract:
  5. In this paper, a three-dimensional (3D) analytical solution of the electrostatic potential is derived for the tri-gate tunneling field-effect transistors (TG TFETs) based on the perimeter-weighted-sum approach. The model is derived by separating the device into a symmetric and an asymmetric double-gate (DG) TFETs and then solving the 2D Poisson’s equation for these structures. The subthreshold tunneling current expression is extracted by numerical integrating the band-to-band tunneling generation rate over the volume of the device. It is shown that the potential distributions, the electric field profile, and the tunneling current predicted by the analytical model are in close agreement with the 3D device simulation results without the need of fitting parameters. Additionally, the dependence of the tunneling current on the device parameters in terms of the gate oxide thickness, gate dielectric constant, channel length, and applied drain bias is investigated and also demonstrated its agreement with the device simulations
  6. Keywords:
  7. Analytical modeling ; Perimeter-weighted-sum ; Three-dimensional (3D) ; Tri-gate (TG) ; Tunneling field-effect transistor (TFET) ; Analytical models ; Drain current ; Electric fields ; Electron tunneling ; Gate dielectrics ; Leakage currents ; MOS devices ; Poisson equation ; Reconfigurable hardware ; Electric field profiles ; Electrostatic potentials ; Potential distributions ; Trigate ; Tunneling field-effect transistors ; Weighted Sum ; Weighted sum approaches ; Field effect transistors
  8. Source: Journal of Computational Electronics ; Volume 15, Issue 3 , 2016 , Pages 820-830 ; 15698025 (ISSN)
  9. URL: https://link.springer.com/article/10.1007%2Fs10825-016-0843-0