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A broadband integrated class-J power amplifier in gaas pHEMT technology

Alizadeh, A ; Sharif University of Technology | 2016

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  1. Type of Document: Article
  2. DOI: 10.1109/TMTT.2016.2552167
  3. Publisher: Institute of Electrical and Electronics Engineers Inc , 2016
  4. Abstract:
  5. This paper presents a design methodology for class-J monolithic microwave integrated circuit (MMIC) power amplifiers (PAs). Theoretical derivations of optimum load impedances, output power, efficiency, and maximum bandwidth are described in presence of nonlinear drain-source resistance of transistors (RDS). A procedure is developed for ideal transistor sizing where transistors are concurrently stabilized and sized to achieve the maximum power-added efficiency (PAE). A 3.5-7 GHz, 0.5-W class-J PA is implemented in a 0.1-μm AlGaAs-InGaAs pHEMT technology to check the accuracy of the proposed approach. With chip dimensions of 1.57 × 1.29 mm2, the PA achieves 56% average PAE over the frequency band while maintaining an average 11-dB small-signal gain
  6. Keywords:
  7. Wideband amplifiers ; Aluminum gallium arsenide ; Amplifiers (electronic) ; Broadband amplifiers ; Efficiency ; Engineering education ; Frequency bands ; Microwave amplifiers ; Microwave integrated circuits ; Power amplifiers ; Reconfigurable hardware ; Class, J ; Design Methodology ; Monolithic microwave integrated circuits (MMIC) ; pHEMT ; Power amplifiers (PAs) ; Small signal gain ; Theoretical derivations ; Transistor sizing ; Monolithic microwave integrated circuits
  8. Source: IEEE Transactions on Microwave Theory and Techniques ; Volume 64, Issue 6 , 2016 , Pages 1822-1830 ; 00189480 (ISSN)
  9. URL: http://ieeexplore.ieee.org/document/7462282/?reload=true