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Design of a Low Power and Robust SRAM Cell Based on FinFET

Sayyah Ensan, Sina | 2017

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  1. Type of Document: M.Sc. Thesis
  2. Language: Farsi
  3. Document No: 50320 (19)
  4. University: Sharif University of Technology
  5. Department: Computer Engineering
  6. Advisor(s): Hesabi, Shahin; Moaiyeri, Mohammad Hossein
  7. Abstract:
  8. By scaling the technology node, leakage power and process variations emerge as the two important factors to design a chip. Static power becomes more important when the number of portable devices which spend most of the time in the idle mode is increasing.Process variations lessen performance, reliability and lead to more leakage power. To mitigate these limitations multiple devices have been proposed to displace Bulk MOSFET.Among these devices we can name FinFET and CNTFET transistors. FinFET transistors due to their superior gate control in compare to Bulk MOSFETs transistor have shown lesser short channel effects, more scalability, more I_on to I_off ratio and lesser process variations. Like FinFET, CNTFET has more I_on to I_off ratio in compare to Bulk MOSFET. However, it suffers from the process variations effects.Design of a low power and robust SRAM cell based on FinFET with technology nodes under 22nm, is the goal of this thesis. Cells’ design is based on Tri-gate transistors and Double-gate transistors, which in Double-gate transistors, back-gate is used to increase the performance. In this thesis we declare SRAM’s reliabilities parameters and then we attempt to increase them. Necessary computations and simulations are done by Synopsys HSpice and Synopsys Sentaurus soft-wares, and also technology files are adopted from University of California Berkeley and PTM. In our proposed design, power consumption has declined over 40%, read static noise margin has increased over 200% and the most important parameter in today chips, leakage power has declined over 62% in compare to conventional 6T SRAM cell
  9. Keywords:
  10. Power Consumption ; Process Variation ; Static Random Access Memory (SRAM)Cell ; Metal Semiconductor Field Effect Transistor (MESFET)Technology ; Fin Field Effect Transistor (FinFET) ; Single-Ended Cells

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