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Design of 6-18-GHz high-power amplifier in GaAs pHEMT technology

Meghdadi, M ; Sharif University of Technology

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  1. Type of Document: Article
  2. DOI: 10.1109/TMTT.2017.2680431
  3. Abstract:
  4. This paper presents a design procedure for a wideband 6-18-GHz monolithic microwave integrated circuit highpower amplifier (HPA) in 0.25-μm AlGaAs-InGaAs pHEMT technology. The design is mainly focused on the realization of the passive circuits to provide the required low-loss and wideband impedance transformation networks. The two-stage GaAs HPA achieves an average output power of 39.6 dBm and a peak output power of 40.5 dBm at 11 GHz, in pulsed mode operation, with a small-signal gain of S21 > 10 dB over the entire bandwidth. The average power added efficiency (PAE) is 22%, with a peak PAE of 29% at 11 GHz. The HPA chip occupies an area of 5×3.6 mm2. The achieved output power and the corresponding power density of 0.51 W/mm2 are amongst the highest reported values in wideband GaAs HPAs. © 2017 IEEE
  5. Keywords:
  6. GaAs ; Impedance matching ; Monolithic microwave integrated circuit ; Power amplifier (PA) ; Power combiner ; Wideband amplifiers ; Aluminum gallium arsenide ; Amplifiers (electronic) ; Design ; Gallium arsenide ; Microwave amplifiers ; Semiconducting gallium ; Average output power ; Design procedure ; High power amplifier ; Impedance transformation networks ; Peak output power ; pHEMT technology ; Pulsed-mode operation ; Small signal gain ; Power amplifiers
  7. Source: IEEE Transactions on Microwave Theory and Techniques ; Volume 65, Issue 7 , 2017 , Pages 2353-2360 ; 00189480 (ISSN)
  8. URL: https://ieeexplore.ieee.org/document/7887705