Loading...

Using superlattice structure in the source of GNRFET to improve its switching performance

Behtoee, B ; Sharif University of Technology | 2020

615 Viewed
  1. Type of Document: Article
  2. DOI: 10.1109/TED.2020.2969887
  3. Publisher: Institute of Electrical and Electronics Engineers Inc , 2020
  4. Abstract:
  5. Our aim is to improve the switching performance of the graphene nanoribbon field-effect transistors (GNRFETs), exploiting the concept of energy filtering. Within the proposed scheme, a superlattice (SL) structure is used in the source of the transistor for filtering high-energy electron tail by engineering the density of states (DOS). According to simulation results, this can significantly decrease the OFF-current and the subthreshold swing (SS). A comparison of the proposed device with a conventional GNRFET and a graphene nanoribbon (GNR) tunneling field-effect transistor (GNRTFET) demonstrates a significant improvement. Therefore, a typical SL-GNRFET can reduce the average and the minimum of the SS to 44.6 and 12.5 mV/dec, respectively, at room temperature. Moreover, in order to optimize the proposed structure, the effects of the SL geometrical parameters on the transistor characteristics are numerically investigated. © 1963-2012 IEEE
  6. Keywords:
  7. Energy filtering ; graphene nanoribbon field-effect transistor (GNRFET) ; nonequilibrium Green's function (NEGF) ; subthreshold swing (SS) ; superlattice (SL) ; Geometry ; Graphene ; Graphene nanoribbon ; Graphene transistors ; Nanoribbons ; Graphene nanoribbon (GNR) ; Non-equilibrium Green's function ; Sub-threshold swing(ss) ; Superlattice structures ; Switching performance ; Transistor characteristics ; Tunneling field-effect transistors ; Field effect transistors
  8. Source: IEEE Transactions on Electron Devices ; Volume 67, Issue 3 , 2020 , Pages 1334-1339
  9. URL: https://ieeexplore.ieee.org/document/8999813