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    The critical voltage of a GPL-reinforced composite microdisk covered with piezoelectric layer

    , Article Engineering with Computers ; 2020 Shamsaddini Lori, E ; Ebrahimi, F ; Elianddy Bin Supeni, E ; Habibi, M ; Safarpour, H ; Sharif University of Technology
    Springer  2020
    Abstract
    In this research, electrically characteristics of a graphene nanoplatelet (GPL)-reinforced composite (GPLRC) microdisk are explored using generalized differential quadrature method. Also, the current microstructure is coupled with a piezoelectric actuator (PIAC). The extended form of Halpin–Tsai micromechanics is used to acquire the elasticity of the structure, whereas the variation of thermal expansion, Poisson’s ratio, and density through the thickness direction is determined by the rule of mixtures. Hamilton’s principle is implemented to establish governing equations and associated boundary conditions of the GPLRC microdisk joint with PIAC. The compatibility conditions are satisfied by... 

    Numerical simulation of vertical tunneling transistor with bilayer graphene as source and drain regions

    , Article Physica Status Solidi (A) Applications and Materials Science ; Volume 214, Issue 10 , 2017 ; 18626300 (ISSN) Horri, A ; Faez, R ; Darvish, G ; Sharif University of Technology
    Abstract
    In this paper, the electrical characteristics of vertical tunneling bilayer graphene field effect transistor (VTBGFET) are theoretically investigated. We evaluate the device behavior using nonequilibrium Green's function (NEGF) formalism combined with an atomistic tight binding model. By using this method, we extract the most significant figures of merit such as ON/OFF current ratio, subthreshold swing, and intrinsic gate-delay time. The results indicate that using a bilayer graphene instead of a monolayer graphene as the base material for the source and drain regions leads to a larger ON/OFF current ratio due to the presence of an energy bandgap in biased bilayer graphene. Also, the... 

    Modeling of a vertical tunneling transistor based on graphene-mos2 heterostructure

    , Article IEEE Transactions on Electron Devices ; Volume 64, Issue 8 , 2017 , Pages 3459-3465 ; 00189383 (ISSN) Horri, A ; Faez, R ; Pourfath, M ; Darvish, G ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2017
    Abstract
    In this paper, for the first time, we present a computational study on the electrical behavior of the field-effect tunneling transistor based on vertical graphene-MoS2 heterostructure and vertical graphene nanoribbon-MoS2 heterostructure. Our simulation is based on nonequilibrium Green's function formalism along with an atomistic tight-binding (TB) model. The TB parameters are obtained by fitting the bandstructure to first-principle results. By using this model, electrical characteristics of device, such as I ON/I OFF ratio, subthreshold swing, and intrinsic gate-delay time, are investigated. We show that the combination of tunneling and thermionic transport allows modulation of current by... 

    Microstructural, optical, and electrical characteristics of Ni/C doped BST thin films

    , Article Ceramics International ; Volume 45, Issue 5 , 2019 , Pages 5503-5510 ; 02728842 (ISSN) Emadi, F ; Nemati, A ; Hinterstein, M ; Adabifiroozjaei, E ; Sharif University of Technology
    Elsevier Ltd  2019
    Abstract
    In the present work the effect of simultaneous doping of carbon and nickel on the microstructural, optical, and electrical properties of barium strontium titanate (BST) is investigated. Thin films of BST were prepared by the sol-gel method in six different compositions ((Ba0.6Sr0.4)(NixCyTi1-x-y)O3): x = y = 0.00 (BST), x = 0.04 y = 0.00 (BST4N), x = 0.04 y = 0.01 (BST4N-1C), x = 0.04 y = 0.02 (BST4N-2C), x = 0.04 y = 0.03 (BST4N-3C), and x = y = 0.04 (BST4N-4C). Structural features and chemical bonds of the films were studied by TGA/DSC, XRD, FT-IR, and FE-SEM. The electrical and optical properties of the films were analysed by impedance spectroscopy and UV–VIS spectroscopy. The results... 

    Liquid soap film generates electricity: a suspended liquid film rotating in an external electric field as an electric generator

    , Article Microfluidics and Nanofluidics ; Vol. 18, issue. 1 , Apr , 2014 , pp. 141-147 ; ISSN:16134982 Amjadi, A ; Feiz, M. S ; Namin, R. M ; Sharif University of Technology
    Abstract
    We have observed that a rotating liquid soap film generates electricity when placed between two non-contact electrodes with a sufficiently large potential difference. In our experiments, suspended liquid film (water + soap film) is formed on the surface of a circular frame, which is forced to rotate in the x−y horizontal plane by a motor. This system is located at the center of two capacitor-like vertical plates to apply an external electric voltage difference in the x-direction. The produced electric current is collected from the liquid film using two conducting electrodes that are separated in the y-direction. We previously reported that a liquid film in an external electric field rotates... 

    Improved efficiency in front-side illuminated dye sensitized solar cells based on free-standing one-dimensional TiO2 nanotube array electrodes

    , Article Solar Energy ; Volume 184 , 2019 , Pages 115-126 ; 0038092X (ISSN) Peighambardoust, N. S ; Khameneh Asl, S ; Mohammadpour, R ; Khameneh Asl, S ; Sharif University of Technology
    Elsevier Ltd  2019
    Abstract
    Although morphological disorder of nanotube structure is further down than the nanoparticular electrode, its density of traps are the hindering effects in the charge transport. In this study, crack-free TiO2 nanotube membranes, which obtained through a re-anodizing process, are fixed on transparent fluorine–tin-oxide glass by applying a few drops of Titanium Isopropoxide without needing the TiO2 powder paste. Front-side illuminated dye sensitized solar cells fabricated by undoped, N-doped and blue TiO2 nanotube membranes are investigated. The electrical characteristics of TiO2 nanotube based dye sensitized solar cells are followed by theoretical analysis using simple one-diode model.... 

    Full quantum mechanical simulation of a novel nanoscale DG-MOSFET: 2D NEGF approach

    , Article IEEE AFRICON 2007, Windhoek, 26 September 2007 through 28 September 2007 ; December , 2007 ; 142440987X (ISBN); 9781424409877 (ISBN) Dehdashti, N ; Orouji, A. A ; Faez, R ; Sharif University of Technology
    2007
    Abstract
    In this paper the electrical characteristics of a novel nanoscale double-gate MOSFET (DG-MOSFET) have been investigate by a full Quantum Mechanical simulation framework. This framework consists of Non-Equilibrium Green's Function (NEGF) solved self-consistently with Poisson's Equation. Quantum transport equations are solved in two-dimension (2-D) by recursive NEGF method in active area of the device to obtain the charge density and Poisson's equation is solved in entire domain of simulation to get potential profile. Once self-consistently achieved all parameters of interest (e.g. potential profile, charge density, DIBL, etc) can be measured. In this novel DG-MOSFET structure, a front gate... 

    Enhanced performance of planar perovskite solar cells using TiO2/SnO2 and TiO2/WO3 bilayer structures: Roles of the interfacial layers

    , Article Solar Energy ; Volume 208 , 2020 , Pages 697-707 Kazemzadeh Otoufi, M ; Ranjbar, M ; Kermanpur, A ; Taghavinia, N ; Minbashi, M ; Forouzandeh, M ; Ebadi, F ; Sharif University of Technology
    Elsevier Ltd  2020
    Abstract
    In planar perovskite solar cells (PSCs), engineering the extraction and recombination of electron–hole pairs by modification of the electron transport layer (ETL)/perovskite interface is very vital for obtaining high performance. The main idea here is to improve properties of the TiO2/perovskite interface by inserting an ultra-thin layer (UTL) of WO3 or SnO2 with the thickness of less than 10 nm by RF magnetron sputtering method. The structural and electrical characteristics of the samples were tested by XRD, AFM, FE-SEM, Mott-Schottky analysis, UV–Vis spectroscopy, J-V characterization and electrochemical impedance spectroscopy (EIS). It was found that the bilayer structured ETLs exhibit... 

    Effect of Gd and Co contents on the microstructural, magneto-optical and electrical characteristics of cobalt ferrite (CoFe2O4) nanoparticles

    , Article Ceramics International ; 2021 ; 02728842 (ISSN) Lu, Y ; Yousaf, M ; Akhtar, M. N ; Noor, A ; Akbar, M ; Shah, M. A. K. Y ; Yan, S ; Wang, F ; Sharif University of Technology
    Elsevier Ltd  2021
    Abstract
    Rare earth oxides with a trivalent nature play a pivotal role in reinforcing the magneto-optical attributes of spinel ferrite nanoparticles by replacing Fe3+ ions. In this study, rare earth Gd oxide doped with CoFe2O4 NPs with a composition of Co1+xGdxFe2-2xO4 (x = 0, 0.05, 0.10, and 0.15) were synthesized using sol-gel auto-combustion. The outcome of Gd cations on the physical, magneto-optical and electrical characteristics of the cobalt ferrite NPs were reported. X-ray diffraction (XRD), and Fourier transform infrared (FTIR) investigations confirmed the single-phase cubic crystalline nature and metal ion stretching in the cobalt ferrite synthesized samples. Decreasing drift in the average... 

    Effect of Gd and Co contents on the microstructural, magneto-optical and electrical characteristics of cobalt ferrite (CoFe2O4) nanoparticles

    , Article Ceramics International ; Volume 48, Issue 2 , 2022 , Pages 2782-2792 ; 02728842 (ISSN) Lu, Y ; Yousaf, M ; Akhtar, M. N ; Noor, A ; Akbar, M ; Shah, M. A. K. Y ; Yan, S ; Wang, F ; Sharif University of Technology
    Elsevier Ltd  2022
    Abstract
    Rare earth oxides with a trivalent nature play a pivotal role in reinforcing the magneto-optical attributes of spinel ferrite nanoparticles by replacing Fe3+ ions. In this study, rare earth Gd oxide doped with CoFe2O4 NPs with a composition of Co1+xGdxFe2-2xO4 (x = 0, 0.05, 0.10, and 0.15) were synthesized using sol-gel auto-combustion. The outcome of Gd cations on the physical, magneto-optical and electrical characteristics of the cobalt ferrite NPs were reported. X-ray diffraction (XRD), and Fourier transform infrared (FTIR) investigations confirmed the single-phase cubic crystalline nature and metal ion stretching in the cobalt ferrite synthesized samples. Decreasing drift in the average... 

    Design and performance of a cylindrical capacitive sensor to monitor the electrical properties

    , Article Journal of Applied Sciences ; Volume 8, Issue 9 , 2008 , Pages 1699-1705 ; 18125654 (ISSN) Golnabi, H ; Azimi, P ; Sharif University of Technology
    2008
    Abstract
    In this study, design and operation of a cylindrical capacitive sensor based on the dielectric and reactance capacitance changes of the gap medium is reported. The proposed system was used to determine the electrical properties of different water liquids as a result of the capacitance variations. For capacitance measurement, the cylindrical gap can be filled up by water liquids under study, the electrical characteristics of different water liquids, mixture of ethanol and water, mixture of methanol and water, mixture of petroleum and water and other liquid mixtures were studied. In this research a big difference about 16200 nF was noticed in the measured capacitance of the corresponding... 

    Bacteriorhodopsin as a superior substitute for hydrazine in chemical reduction of single-layer graphene oxide sheets

    , Article Carbon ; Volume 81, Issue 1 , 2015 , Pages 158-166 ; 00086223 (ISSN) Akhavan, O ; Sharif University of Technology
    Elsevier Ltd  2015
    Abstract
    Bacteriorhodopsin (bR) molecules were utilized as light-driven proton pumps for green as well as effective reduction of single-layer graphene oxide (GO) sheets. The bR molecules and graphene sheets were separated from each other in an aqueous environment by using a polytetrafluoroethylene membrane filter, in order to prevent their direct interactions (including attachment of the bR molecules onto the GO). Although reduction of GO using hydrazine or bR showed similar deoxygenation levels (based on X-ray photoelectron spectroscopy), the former resulted in formation of CAN bonds which can substantially decrease the electrical conductivity of the reduced sheets. The electrical characteristics of... 

    Aqueous spray pyrolysis of CuInSe2 thin films: Study of different indium salts in precursor solution on physical and electrical properties of sprayed thin films

    , Article Materials Science in Semiconductor Processing ; Volume 126 , 2021 ; 13698001 (ISSN) Hashemi, M ; Bagher Ghorashi, S. M ; Tajabadi, F ; Taghavinia, N ; Sharif University of Technology
    Elsevier Ltd  2021
    Abstract
    Herein, we deposited CuInSe2(CISe) thin films by using aqueous spray deposition method and post selenization process. The effect of different indium precursor salts including indium chloride, indium nitrate and indium acetate on the structural, morphological, optical and electrical properties of sprayed CISe layers has been studied by using x-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM-EDS), optical transmission (UV–Vis), Mott-Schottky analysis, I–V dark measurements. Although all the deposited thin films show a chalcopyrite tetragonal ordering structure of CISe, the crystallinity, morphology, and electrical characteristics are strongly influenced by the type of... 

    Analysis and simulation of asymmetrical nanoscale self-switching transistor

    , Article International Journal of Modelling and Simulation ; 2021 ; 02286203 (ISSN) Horri, A ; Faez, R ; Sharif University of Technology
    Taylor and Francis Ltd  2021
    Abstract
    In this paper, we present a computational study on the electrical behaviour of self-switching transistors (SSTs) based on InGaAs/InP heterojunction. Our simulation is based on the solution of Poisson and Schrodinger equations self-consistently by using Finite Element Method (FEM). By using this method, electrical characteristics of device, such as (Formula presented.) ratio, subthreshold swing, and intrinsic gate-delay time are investigated. Also, the effects of geometrical variations on the electrical parameters of SSTs are simulated. We show that appropriate design of the device allows current modulation exceeding (Formula presented.) at room temperature. © 2021 Informa UK Limited, trading... 

    Analysis and simulation of asymmetrical nanoscale self-switching transistor

    , Article International Journal of Modelling and Simulation ; Volume 42, Issue 5 , 2022 , Pages 775-781 ; 02286203 (ISSN) Horri, A ; Faez, R ; Sharif University of Technology
    Taylor and Francis Ltd  2022
    Abstract
    In this paper, we present a computational study on the electrical behaviour of self-switching transistors (SSTs) based on InGaAs/InP heterojunction. Our simulation is based on the solution of Poisson and Schrodinger equations self-consistently by using Finite Element Method (FEM). By using this method, electrical characteristics of device, such as (Formula presented.) ratio, subthreshold swing, and intrinsic gate-delay time are investigated. Also, the effects of geometrical variations on the electrical parameters of SSTs are simulated. We show that appropriate design of the device allows current modulation exceeding (Formula presented.) at room temperature. © 2021 Informa UK Limited, trading... 

    A computational study of vertical tunneling transistors based on graphene-WS2 heterostructure

    , Article Journal of Applied Physics ; Volume 121, Issue 21 , 2017 ; 00218979 (ISSN) Horri, A ; Faez, R ; Pourfath, M ; Darvish, G ; Sharif University of Technology
    American Institute of Physics Inc  2017
    Abstract
    In this paper, for the first time, we present a computational study on electrical characteristics of field effect tunneling transistors based on a vertical graphene-WS2 heterostructure and vertical graphene nanoribbon (GNR)-WS2 heterostructure (VTGNRFET). Our model uses the nonequilibrium Green's function formalism along with an atomistic tight binding (TB) method. The TB parameters are extracted by fitting the bandstructure to first principles results. We show that, due to the advantage of switching between tunneling and thermionic transport regimes, an improvement can be achieved in the electrical characteristics of the device. We find that the increase of the number of WS2 layers enhances... 

    A comparative study of NEGF and DDMS models in the GAA silicon nanowire transistor

    , Article International Journal of Electronics ; Volume 99, Issue 9 , 2012 , Pages 1299-1307 ; 00207217 (ISSN) Hosseini, R ; Fathipour, M ; Faez, R ; Sharif University of Technology
    Abstract
    In this article, we have used quantum and semiclassical models to analyse the electrical characteristics of gate all around silicon nanowire transistor (GAA SNWT). A quantum mechanical transport approach based on non-equilibrium Green's function (NEGF) method with the use of mode space approach in the frame work of effective mass theory has been employed for this analysis. Semiclassical drift diffusion mode space (DDMS) approach has also been used for the simulation of GAA SNWT. We have studied the short-channel effects on the performance of GAA SNWT and evaluated the variation of the threshold voltage, the subthreshold slope (SS), the leakage current and the drain-induced barrier lowering...