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    Effects of polydimethylsiloxane grafting on the calcification, physical properties, and biocompatibility of polyurethane in a heart valve

    , Article Journal of Applied Polymer Science ; Volume 98, Issue 2 , 2005 , Pages 758-766 ; 00218995 (ISSN) Dabagh, M ; Abdekhodaie, M. J ; Khorasani, M. T ; Sharif University of Technology
    2005
    Abstract
    Segmented polyurethane (PU) has proven to be the best biomaterial for artificial heart valves, but the calcification of polyurethane surfaces causes serious problems in long-term implants. This work was undertaken to evaluate the effects of polydimethylsiloxane (PDMS) grafting on the calcification, biocompatibility, and blood compatibility of polyurethane. A grafted polyurethane film was compared with virgin polyurethane surfaces. Physical properties of the samples were examined using different techniques. The hydrophobicity of the polyurethane films increased as a result of silicone modification. The effects of surface modification of polyurethane films on their calcification and fibroblast... 

    FEM study of the second stage creep behavior of Al6061/SiC metal matrix composite

    , Article Computational Materials Science ; Volume 34, Issue 2 , 2005 , Pages 140-150 ; 09270256 (ISSN) Mondali, M ; Abedian, A ; Adibnazari, S ; Sharif University of Technology
    2005
    Abstract
    Prediction of the creep behavior of metal matrix whiskers reinforced composites is the subject of many analytical and experimental research works. However, application of the FEM modeling to this area has not been so successful. The present research work highlights the shortcomings of the previous FEM studies and combines the analytical findings with the power of FEM modeling. More specifically, the fiber/matrix debonding parameter ξ is incorporated into the modeling. In contrary to the analytical results, it is shown that the value of ξ could only change in the range of zero to 0.5. The results indicate that the exponential creep law along with the modified ξ-σ relationship, and the newly... 

    The effect of gypsum cementation on the mechanical behavior of gravely sands

    , Article Geotechnical Testing Journal ; Volume 28, Issue 4 , 2005 , Pages 380-390 ; 01496115 (ISSN) Haeri, S. M ; Hamidi, A ; Tabatabaee, N ; Sharif University of Technology
    2005
    Abstract
    The behavior of a cemented gravely sand is studied using triaxial tests. Drained and undrained tests were performed on dry and saturated specimens, and stress-strain characteristics of the soil, along with volumetric and pore pressure changes, were identified. The gypsum plaster was used as the cement agent and was mixed with the soil in different percentages. The tests were done in the usual range of confining pressures, from 25 to 500 kPa. Test results show that dilation occurs even at the highest confining stress and the least cement content. The behavior of the cemented soil is found to be more brittle in drained condition than the undrained one. However, the brittleness of soil... 

    From continuous to quantized charging response of silicon nanocrystals obtained by ultra-low energy ion implantation

    , Article Solid-State Electronics ; Volume 49, Issue 7 , 2005 , Pages 1198-1205 ; 00381101 (ISSN) Shalchian, M ; Grisolia, J ; Ben Assayag, G ; Coffin, H ; Atarodi, S. M ; Claverie, A ; Sharif University of Technology
    2005
    Abstract
    In this paper, we present a study on the contribution of silicon nanocrystals to the electrical transport characteristics of large (100 μm × 100 μm) and small (100 nm × 100 nm) metal-oxide-semiconductor (MOS) capacitors at room temperature. A layer of silicon nanocrystals is synthesized within the oxide of these capacitors by ultra-low energy ion implantation and annealing. Several features including negative differential resistance (NDR), sharp current peaks and random telegraph signal (RTS) are demonstrated in the current-voltage and current-time characteristics of these capacitors. These features have been associated to charge storage in silicon nanocrystals and to the resulting Coulomb... 

    Efficient aerobic oxidation of alcohols using a novel combination N-hydroxy phthalimide (NHPI) and a recyclable heterogeneous cobalt complex

    , Article Journal of Molecular Catalysis A: Chemical ; Volume 232, Issue 1-2 , 2005 , Pages 95-99 ; 13811169 (ISSN) Rajabi, F ; Karimi, B ; Sharif University of Technology
    2005
    Abstract
    A novel combination between N-hydroxy phthalimide (NHPI) and a silica based cobalt (II) interphase catalyst (1) efficiently catalyzes the aerobic oxidation of various types of alcohols to the corresponding carbonyl compounds. The catalyst 1 shows high thermal stability and also could be recovered and reused in combination with NHPI for at least five reaction cycles without considerable loss of reactivity. © 2005 Elsevier B.V. All rights reserved  

    Sol-gel-based solid-phase microextraction and gas chromatography-mass spectrometry determination of dextromethorphan and dextrorphan in human plasma

    , Article Journal of Chromatography B: Analytical Technologies in the Biomedical and Life Sciences ; Volume 818, Issue 2 , 2005 , Pages 147-157 ; 15700232 (ISSN) Bagheri, H ; Eshaghi, A ; Rouini, M. R ; Sharif University of Technology
    2005
    Abstract
    A novel solid-phase microextraction (SPME) method was developed for isolation of dextromethorphan (DM) and its main metabolite dextrorphan (DP) from human plasma followed by GC-MS determination. Three different polymers, poly(dimethylsiloxane) (PDMS), poly(ethylenepropyleneglycol) monobutyl ether (Ucon) and polyethylene glycol (PEG) were synthesized as coated fibers using sol-gel methodologies. DP was converted to its acetyl-derivative prior to extraction and subsequent determination. The porosity of coated fibers was examined by SEM technique. Effects of different parameters such as fiber coating type, extraction mode, agitation method, sample volume, extraction time, and desorption... 

    Room-temperature quantum effect in silicon nanoparticles obtained by low-energy ion implantation and embedded in a nanometer scale capacitor

    , Article Applied Physics Letters ; Volume 86, Issue 16 , 2005 , Pages 1-3 ; 00036951 (ISSN) Shalchian, M ; Grisolia, J ; Assayag, G. B ; Coffin, H ; Atarodi, S. M ; Claverie, A ; Sharif University of Technology
    2005
    Abstract
    In this article, we present the room-temperature current-voltage characteristics of a nanometer scale (100×100 nm2) metal-oxide-semiconductor capacitor containing few (less than 100) silicon nanoparticles. The layer of silicon nanoparticles is synthesized within the oxide of this capacitor by ultra low-energy ion implantation and annealing. Current fluctuations in the form of discrete current steps and sharp peaks appeared in the static and dynamic I (V) characteristics of the capacitor. These features have been associated to quantized charging and discharging of the nanoparticles and the resulting Coulomb interaction to the tunneling current. © 2005 American Institute of Physics  

    Simultaneous optimization and simulation of a-Si1-xC x layers on n-type silicon solar cells

    , Article Solar Energy Materials and Solar Cells ; Volume 85, Issue 4 , 2005 , Pages 467-476 ; 09270248 (ISSN) Vesaghi, M. A ; Asadi, K ; Sharif University of Technology
    2005
    Abstract
    We have applied Rosenbrock's optimization algorithm to obtain the optimized efficiency of a solar cell and its structural parameters. To obtain these parameters, we have developed a computer program for simultaneous optimization and simulation of the solar cell. We have used experimental data on the electrical and optical properties of a-Si1-xCx layers, put them into the written code and obtained the optimized parameters of this solar cell. The maximum efficiency is 6.32% which is close to one experimental result. © 2004 Elsevier B.V. All rights reserved  

    Characterization of porous poly-silicon impregnated with Pd as a hydrogen sensor

    , Article Journal of Physics D: Applied Physics ; Volume 38, Issue 1 , 2005 , Pages 36-40 ; 00223727 (ISSN) Rahimi, F ; Iraji Zad, A ; Razi, F ; Sharif University of Technology
    2005
    Abstract
    Porous poly-silicon (PPS) samples, obtained by electrochemical anodization of p-type poly-silicon wafers, were doped with Pd by the electroless process. Rutherford backscattering spectroscopy shows that Pd has diffused a few micrometres into the PPS layer. Scanning electron microscopy and energy dispersive x-ray analysis results demonstrate the presence of Pd as dispersed clusters on the surface. The variation of the electrical resistance in the presence of dry air diluted with hydrogen at room temperature shows that Pd/PPS samples have the ability to sense hydrogen at levels down to several thousands of ppm. This value is far below the flammability limit of hydrogen gas. It was found that... 

    Evolution of quantum electronic features with the size of silicon nanoparticles embedded in a SiO2 layer obtained by low energy ion implantation

    , Article 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005, Giens, 25 September 2005 through 30 September 2005 ; Volume 108-109 , 2005 , Pages 71-76 ; 10120394 (ISSN); 3908451132 (ISBN); 9783908451136 (ISBN) Grisolia, J ; Shalchian, M ; BenAssayag, G ; Coffin, H ; Bonafos, C ; Dumas, C ; Atarodi, S. M ; Claverie, A ; Sharif University of Technology
    Trans Tech Publications Ltd  2005
    Abstract
    In this paper, we have studied the evolution of quantum electronic features with the size of silicon nanoparticles embedded in an ultra-thin SiO 2 layer. These nanoparticles were synthesized by ultralow energy (1 KeV) ion implantation and annealing. Their size was modified using the effect of annealing under slightly oxidizing ambient (N2+O2). Material characterization techniques including transmission electron microscopy (TEM) Fresnel imaging and spatially resolved electron energy loss spectroscopy (EELS) have been used to evaluate the effects of oxidation on structural characteristics of nanocrystal layer. Electrical transport characteristics have been measured on few (less than two... 

    From continuous to quantized charging phenomena in few nanocrystals MOS structures

    , Article 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005, Giens, 25 September 2005 through 30 September 2005 ; Volume 108-109 , 2005 , Pages 25-32 ; 10120394 (ISSN); 3908451132 (ISBN); 9783908451136 (ISBN) BenAssayag, G ; Shalchian, M ; Grisolia, J ; Bonafos, C ; Atarodi, S. M ; Claverie, A ; Sharif University of Technology
    Trans Tech Publications Ltd  2005
    Abstract
    In this paper, we present a study on the contribution of silicon nanocrystals to the electrical transport characteristics of large (100 μm × 100 μm) and small (100 nm × 100 nm) metaloxide-semiconductor (MOS) capacitors at room temperature. A layer of silicon nanocrystals is synthesized within the oxide of these capacitors by ultra-low energy ion implantation and annealing. Several features including negative differential resistance (NDR), sharp current peaks and random telegraph signal (RTS) are demonstrated in the current-voltage and current-time characteristics of these capacitors. These features have been associated to charge storage in silicon nanocrystals and to the resulting Coulomb... 

    From continuous to quantized charging phenomena in few nanocrystals MOS structures

    , Article 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2005, 25 September 2005 through 30 September 2005 ; Volume 108-109 , 2005 , Pages 25-32 ; 10120394 (ISSN); 9783908451136 (ISBN) Benassayag, G ; Shalchian, M ; Grisolia, J ; Bonafos, C ; Atarodi, S. M ; Claverie, A ; Pichaud B ; Claverie A ; Alquier D ; Richter H ; Kittler M ; Richter H ; Kittler M ; Sharif University of Technology
    Trans Tech Publications Ltd  2005
    Abstract
    In this paper, we present a study on the contribution of silicon nanocrystals to the electrical transport characteristics of large (100 µ x 100 µm) and small (100 nm x 100 nm) metaloxide- semiconductor (MOS) capacitors at room temperature. A layer of silicon nanocrystals is synthesized within the oxide of these capacitors by ultra-low energy ion implantation and annealing. Several features including negative differential resistance (NDR), sharp current peaks and random telegraph signal (RTS) are demonstrated in the current-voltage and current-time characteristics of these capacitors. These features have been associated to charge storage in silicon nanocrystals and to the resulting Coulomb... 

    Development of cold rolling and intercritical annealing texture in two TRIP-aided steels

    , Article 14th International Conference on Textures of Materials, ICOTOM 14, Leuven, 11 July 2005 through 15 July 2005 ; Volume 495-497, Issue PART 1 , 2005 , Pages 513-518 ; 02555476 (ISSN); 087849975X (ISBN); 9780878499755 (ISBN) Emadodin, E ; Akbarzadeh, A ; Sharif University of Technology
    Trans Tech Publications Ltd  2005
    Abstract
    High strength TRIP-aided steel sheets with high formability and better ductility are of industrial interest. Texture control and retained austenite characterization are considered as the main factors with respect to the formability and ductility. In this work, the effect of cold rolling and intercritical annealing on texture development has been investigated for two TRTP-aided steel sheets, which are different in Si and Al content. Experiments show that the cold rolling extends the a and γ-fibers on these grades of steel. Intercretically annealing decreases the intensity of α-fiber and leads to sharpness of γ-fiber, especially for Al steel  

    Evolution of quantum electronic features with the size of silicon nanoparticles embedded in a sio2 layer obtained by low energy ion implantation

    , Article 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2005, 25 September 2005 through 30 September 2005 ; Volume 108-109 , 2005 , Pages 71-76 ; 10120394 (ISSN); 9783908451136 (ISBN) Grisolia, J ; Shalchian, M ; Benassayag, G ; Coffin, H ; Bonafos, C ; Dumas, C ; Atarodi, S. M ; Claverie, A ; Pichaud B ; Claverie A ; Alquier D ; Richter H ; Kittler M ; Richter H ; Kittler M ; Sharif University of Technology
    Trans Tech Publications Ltd  2005
    Abstract
    In this paper, we have studied the evolution of quantum electronic features with the size of silicon nanoparticles embedded in an ultra-thin SiO2 layer. These nanoparticles were synthesized by ultralow energy (1 KeV) ion implantation and annealing. Their size was modified using the effect of annealing under slightly oxidizing ambient (N2+O2). Material characterization techniques including transmission electron microscopy (TEM) Fresnel imaging and spatially resolved electron energy loss spectroscopy (EELS) have been used to evaluate the effects of oxidation on structural characteristics of nanocrystal layer. Electrical transport characteristics have been measured on few (less than two... 

    Investigating different circuit styles for digital circuits using organic transistors

    , Article 2007 International Symposium on Integrated Circuits, ISIC, Singapore, 26 September 2007 through 28 September 2007 ; 2007 , Pages 5-8 ; 1424407974 (ISBN); 9781424407972 (ISBN) Zamanlooy, B ; Ayatollahi, A ; Fakhraie, S. M ; Chahardori, M ; Sharif University of Technology
    2007
    Abstract
    In search of low cost and flexible substrates organic transistors have been suggested as an alternate to silicon transistors. Level 1 model extraction, investigating different circuit styles and proposing two new circuit styles for organic integrated circuits is done in this paper. First, level 1 model of organic transistor is found using ID-VDS characteristics of transistors reported by [9]. After that different design styles used in CMOS digital integrated circuits are reviewed and the functionality of these styles for organic integrated circuits is investigated. Two new circuit styles have been proposed in this section which have better performance for organic circuits comparing with... 

    Characterization of porous poly-silicon as a gas sensor

    , Article Sensors and Actuators, B: Chemical ; Volume 100, Issue 3 , 2004 , Pages 341-346 ; 09254005 (ISSN) Iraji Zad, A ; Rahimi, F ; Chavoshi, M ; Ahadian, M. M ; Sharif University of Technology
    2004
    Abstract
    Porous poly-silicon (PPS) is a cheaper alternative to single crystal porous silicon and is a favorable choice for making gas sensors. In this study, porous poly-silicon samples were prepared using different HF concentrations and the structural and gas-sensing properties were studied. The topography of the surface was investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM) techniques. The variation of electrical conductivity of the samples in the presence of dry air-diluted acetone, ethanol and methanol showed that for a constant etching current, the sensitivity was highest for samples prepared in 13% HF solution. The structure of the films in the optimum HF... 

    Power management for multirate DS-CDMA systems with imperfect successive interference cancellation

    , Article 2004 IEEE International Conference on Communications, Paris, 20 June 2004 through 24 June 2004 ; Volume 6 , 2004 , Pages 3256-3260 ; 05361486 (ISSN) Jalali, S ; Khalaj, B. H ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2004
    Abstract
    In this paper, we will address the issue of power distribution and decoding order in the uplink side of a multirate code division multiple access (CDMA) system based on linear successive interference cancellation (SIC). First, the closed form expressions for the required received powers at the base station, in order to achieve the users bit rate and Quality of Service (QoS) requirements, will be derived. Then, we will investigate the problem of optimal decoding order of the users under imperfect interference cancellation condition and will show that optimum decoding order of users, unlike the case of perfect SIC, is a function of their requested SINR values in addition to their path gains.... 

    A general model for multicomponent transport in nonporous membranes based on Maxwell-Stefan formulation

    , Article Chemical Engineering Communications ; Volume 191, Issue 4 , 2004 , Pages 460-499 ; 00986445 (ISSN) Ghoreyshi, A. A ; Farhadpour, F. A ; Soltanieh, M ; Sharif University of Technology
    Taylor and Francis Ltd  2004
    Abstract
    A "general" model of membrane transport was formulated using the mechanistic Maxwell-Stefan approach and generalized driving forces, which included the contribution from the various internal and external driving forces. Transient models of dialysis and pervaporation were developed that used exactly the same general model to describe the transport through the membrane. In this model, the bulk solution/polymer equilibria were described by a modified Flory-Huggins model, and the concentration dependence of ternary Maxwell-Stefan diffusivities was described by a natural extension of the binary Vignes relationship to a multicomponent system. A notable advantage of the general model lies in the... 

    Iterative interference cancellation and decoding for a coded UWB-TH-CDMA system in multipath channels using MMSE filters

    , Article 14th IEEE 2003 International Symposium on Personal, Indoor and Mobile Radio Communications, PIMRC2003, Beijing, 7 September 2003 through 10 September 2003 ; Volume 2 , 2003 , Pages 1555-1559 ; 0780378229 (ISBN); 9780780378223 (ISBN) Bayesteh, A ; Nasiri Kenari, M ; Sharif University of Technology
    2003
    Abstract
    In this paper, we consider a low-complexity iterative receiver for decoding multi-user information data for the bandwidth efficient convolutionally coded UWB-TH-CDMA system, in a multipath channel. The proposed receiver structure consists of a bank of soft interference cancellers (SIC), followed by a block of MMSE filters. The outputs of these filters, are feeded to a bank of likelihood calculators (LC), each followed by a soft-input soft-output (SISO) convolutional decoder. Information is fed back from SISO decoders to SICs for interference cancellation. This receiver requires the knowledge of the attenuation and delay of the strongest path of each active user. We evaluate the performance... 

    Development of the tigre compton telescope for intermediate-energy gamma-ray astronomy

    , Article IEEE Transactions on Nuclear Science ; Volume 50, Issue 2 , 2003 , Pages 251-257 ; 00189499 (ISSN) O'Neill, T. J ; Bhattacharya, D ; Polsen, M ; Zych, A. D ; Samimi, J ; Akyuz, A ; Sharif University of Technology
    2003
    Abstract
    Gamma-ray observations in the low and medium energy range (0.1-100 MeV) with sufficiently sensitive telescopes will provide unique insights into many outstanding high-energy astrophysics questions. The University of California, Riverside (UCR) Tracking and Imaging Gamma-Ray Telescope (TIGRE) Compton gamma-ray telescope uses multilayers of silicon strip detectors to, for the first time, track the Compton electron and CsI(Tl)-photodiode detectors to measure the scattered photon energy. By combining the Compton telescope's inherent imaging capability with improved background discrimination, a larger field-of-view and improved spectral and spatial resolutions, a significant improvement in...