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- Type of Document: Ph.D. Dissertation
- Language: Farsi
- Document No: 45895 (05)
- University: Sharif University of Technology
- Department: Electrical Engineering
- Advisor(s): Khorasani, Sina; Sarvari, Reza
- Abstract:
- In this thesis, we present for the first time a unified and extensive theory of two-dimensional bipolar junction transistors fabricated on mono-layer materials. Unlike their bulk counterparts which are described by the conventional theory of bulk junctions, the proposed class of structures behaves here significantly different and needs an entirely different theory. This has been based on the theory of planar p-n rectifying junction diodes developed in an earlier study of ours, where we had investigated a basic p-n junction model with abrupt doping profile. The accuracy of theory is limited to the applicability of drift-diffusion model with depletion-layer approximation, while disregarding effects such as unequilibrium distribution, kinteic and transport effects, quantum phenomena, and as such. We will derive necessary basic formulae and study the continuity equations and suggest useful analytical approximate solutions. We will also study the effects of thermal generation and recombination processes on the operation of the designed p-n junction. The parameters of the designed bipolar junction transistor will be shown to be obtainable, subject to the inclusion of generation and recombination of carriers. We provide numerical examples for the single-sided hydrogenated Graphene, or Graphone, as the base material. Graphene may be hydrogenated to obtain a semiconductor with an energy gap, named Graphane. The planar arrangement and unique physical and electronic transport features of Graphane/Graphone, allows patterning and creation of doped p and n regions, thus allowing two-dimensional p-n rectifying junctions. Besides having a controllable bandgap which makes it very appealing for integrated electronic applications, Graphone may be selectively grown on a Graphene layer, while being supported on an insulating substrate. This very important feature leads to a highly desirable material consistency and simplification in the fabrication process, that is, having patterned Graphone semiconductor junctions simply attached to Graphene interconnects. Here, we will present analysis of a two-dimensional Graphone p-n junction and an n-p-n bipolar transistor, both having an abrupt doping profile. Based on this theory of Graphone diodes, here we derive the small-signal equivalent model, and estimate the performance of the device. A saturation voltage of less than 0.1V, together with a moderate current gain of about 138 and threshold frequency of 77GHz, but exceedingly small power-delay
- Keywords:
- Graphine ; Graphane ; Nanoelectronic ; Bipolar Transistors ; Ideal p-n Junction ; Two Dimentional Materials ; Graphone
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