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Synthesize and Characterization of 2D WS2 Nano-layers for Next Generation Optoelectronic Devices

Rahmani Taji Boyuk, Mohammad Reza | 2017

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  1. Type of Document: M.Sc. Thesis
  2. Language: Farsi
  3. Document No: 49433 (07)
  4. University: Sharif University of Technology
  5. Department: Materials Science and Engineering
  6. Advisor(s): Simchi, Abdolreza
  7. Abstract:
  8. Transition Metal Dichalcogenids (TMD) are types of 2D materials that exibit wide range of electronic, optical, mechanical, chemical, and thermal properties. These materials with MX2 general formula, have atract attentions with respect to their unusual properties because of their very limited dimensions. Their tunable properties and materials availibility make them attractive for wide range of applications. In recent years, chemical vapor deposition (CVD) methods are promising in preparing high quality TMD with scalable size, controllable thickness, and very excellent electronic properties. Also, chalenges are remaining in synthesis and transfering of TMD are difficulty for most of researches. Therefore, an experimental synthesis procedure for solving problems is necessary. Hence, CVD processes for preparing single and uniform layers need developing. Furthermore investigating a simple route for preparing this material in large scale is necessary. Therefore we had been synthesized WS2 layers with large area and at low temperatures by CVD and explored temperature, time, flow and mass effect. In second method WS2 nanosheets and quantum dots were prepared by Ball mill in organic solvents and solution of water and surfactant. Effect of time, solvent type and solution concentration were investigated
  9. Keywords:
  10. Semiconductors ; Quantum Dot ; Chemical Vapor Deposition (CVD) ; Nanosheet ; Nano Layers ; Tungsten Disulfide ; Wet Ball Mill

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