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An improved macro-model for simulation of single electron transistor (SET) using HSPICE

Karimian, M ; Sharif University of Technology

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  1. Type of Document: Article
  2. DOI: 10.1109/TIC-STH.2009.5444535
  3. Abstract:
  4. To get a more accurate model for simulation of single electron transistors (SETs), we have proposed a new macromodel that includes the ability of electron tunneling time calculation. In our proposed model, we have modified the previous models and applied some basic corrections to their formulas. In addition, we have added a switched capacitor circuit, as a quantizer, to calculate the electron tunneling time. We used HSPICE for high-speed simulation and observed that the simulation results obtained from our model matched more closely with that of SIMON 2.0. We also could evaluate the time of electron tunneling through the barrier by using the quantizer. Clearly, our macro-model gives more accurate results than of the other models when compare with SIMON 2.0, and can be used for calculating the delay time of complicated circuits. ©2009 IEEE
  5. Keywords:
  6. HSPICE ; Quantizer ; SIMON ; Single electron transistor (SET) ; Switched capacitor circuit ; Complicated circuits ; Delay time ; High-speed ; Macro-model ; Quantizers ; Simulation result ; Switched capacitor circuits ; Capacitance ; Capacitance measurement ; Capacitors ; Computer simulation ; Delay circuits ; Electron traps ; Electron tunneling ; Electrons ; Technological forecasting ; Temperature indicating cameras ; Transients ; Tunneling (excavation) ; Single electron transistors
  7. Source: TIC-STH'09: 2009 IEEE Toronto International Conference - Science and Technology for Humanity, 26 September 2009 through 27 September 2009, Toronto, ON ; 2009 , Pages 1000-1004 ; 9781424438785 (ISBN)
  8. URL: http://ieeexplore.ieee.org/document/5444535