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Charge controlling in nanoscale shielded channel DG-MOSFET: A quantum simulation

Dehdashti, N ; Sharif University of Technology | 2007

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  1. Type of Document: Article
  2. DOI: 10.1109/IWPSD.2007.4472469
  3. Publisher: 2007
  4. Abstract:
  5. Nanoscale Shielded channel transistors are investigated by solving the two-dimensional Poisson equation self-consistently with ballistic quantum transport equations for first time. We present self-consistent solutions of ultrathin body device structures to investigate the effect of electrically shielded channel region which impose charge controlling in the channel region on the characteristics of nanoscale DG-MOSFET. The simulation method is based on Nonequlibrium Green's Function (NEGF). Starting from a basic structure with a gate length of 10 nm, the effect of gate length variation on the performance of the device has been investigated. © 2007 IEEE
  6. Keywords:
  7. Differential equations ; Electric conductivity ; Galerkin methods ; Green's function ; Nanostructured materials ; Nanotechnology ; Poisson equation ; Quantum chemistry ; Quantum electronics ; Semiconductor device manufacture ; Semiconductor device models ; Semiconductor device structures ; Semiconductor devices ; Semiconductor materials ; Semiconductor switches ; Systems engineering ; Two dimensional ; Basic structures ; Channel regions ; Channel transistors ; Charge controlling ; Gate lengths ; Gate length variation ; Nano scaling ; Nonequilibrium green's function (NEGF) ; Quantum simulations ; Quantum transport equations ; Shielded channel DG-MOSFET ; Simulation methods ; Two-dimensional quantum simulation ; Ultrathin body device structures ; MOSFET devices
  8. Source: 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, Mumbai, 16 December 2007 through 20 December 2007 ; 2007 , Pages 127-129 ; 9781424417285 (ISBN)
  9. URL: https://ieeexplore.ieee.org/document/4472469