Loading...

From continuous to quantized charging response of silicon nanocrystals obtained by ultra-low energy ion implantation

Shalchian, M ; Sharif University of Technology | 2005

273 Viewed
  1. Type of Document: Article
  2. DOI: 10.1016/j.sse.2005.04.009
  3. Publisher: 2005
  4. Abstract:
  5. In this paper, we present a study on the contribution of silicon nanocrystals to the electrical transport characteristics of large (100 μm × 100 μm) and small (100 nm × 100 nm) metal-oxide-semiconductor (MOS) capacitors at room temperature. A layer of silicon nanocrystals is synthesized within the oxide of these capacitors by ultra-low energy ion implantation and annealing. Several features including negative differential resistance (NDR), sharp current peaks and random telegraph signal (RTS) are demonstrated in the current-voltage and current-time characteristics of these capacitors. These features have been associated to charge storage in silicon nanocrystals and to the resulting Coulomb interaction between the stored charges and the tunneling current. Clear transition from a continuous response of large capacitors to a discrete response of small capacitors reveals the quantized nature of the charge storage phenomenon in these nanocrystalline dots. © 2005 Elsevier Ltd. All rights reserved
  6. Keywords:
  7. Capacitors ; Chemical vapor deposition ; CMOS integrated circuits ; Coulomb blockade ; Current voltage characteristics ; Ion implantation ; Scanning electron microscopy ; Semiconductor quantum dots ; Silicon ; Transmission electron microscopy ; Negative differential resistance (NDR) ; Random telegraph signal (RTS) ; Silicon nanocrystals ; Spectrum mapping ; Nanostructured materials
  8. Source: Solid-State Electronics ; Volume 49, Issue 7 , 2005 , Pages 1198-1205 ; 00381101 (ISSN)
  9. URL: https://www.sciencedirect.com/science/article/abs/pii/S0038110105001188