Loading...

Design of robust SRAM cells against single-event multiple effects for nanometer technologies

Rajaei, R ; Sharif University of Technology

669 Viewed
  1. Type of Document: Article
  2. DOI: 10.1109/TDMR.2015.2456832
  3. Abstract:
  4. As technology size scales down toward lower two-digit nanometer dimensions, sensitivity of CMOS circuits to radiation effects increases. Static random access memory cells (SRAMs) that are mostly employed as high-performance and high-density memory cells are prone to radiation-induced single-event upsets. Therefore, designing reliable SRAM cells has always been a serious challenge. In this paper, we propose two novel SRAM cells, namely, RHD11 and RHD13, that provide more attractive features than their latest proposed counterparts. Simulation results show that our proposed SRAM cells as compared with some state-of-the-art designs have considerably higher robustness against single-event multiple effects. Moreover, they offer a sensible area overhead advantage so that our proposed RHD11 SRAM cell has 19.9% smaller area than the prominent dual-interlocked cell. The simulation results and analyses show that our proposed SRAM cells, particularly the proposed RHD13, have a considerable lower failure probability among the considered recent radiation-hardened SRAM cells
  5. Keywords:
  6. Single event multiple effect (SEME) ; Single event upset (SEU) ; Soft error ; SRAM cell ; Cells ; CMOS integrated circuits ; Cytology ; Digital storage ; Flash memory ; Integrated circuit design ; Radiation effects ; Radiation hardening ; Random access storage ; Semiconductor storage ; High density memory ; Multiple effect ; Nanometer dimensions ; Nanometer technology ; Single event upsets ; Static random access memory ; Static random access storage
  7. Source: IEEE Transactions on Device and Materials Reliability ; Volume 15, Issue 3 , 2015 , Pages 429-436 ; 15304388 (ISSN)
  8. URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7159049