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Room-temperature quantum effect in silicon nanoparticles obtained by low-energy ion implantation and embedded in a nanometer scale capacitor

Shalchian, M ; Sharif University of Technology | 2005

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  1. Type of Document: Article
  2. DOI: 10.1063/1.1906329
  3. Publisher: 2005
  4. Abstract:
  5. In this article, we present the room-temperature current-voltage characteristics of a nanometer scale (100×100 nm2) metal-oxide-semiconductor capacitor containing few (less than 100) silicon nanoparticles. The layer of silicon nanoparticles is synthesized within the oxide of this capacitor by ultra low-energy ion implantation and annealing. Current fluctuations in the form of discrete current steps and sharp peaks appeared in the static and dynamic I (V) characteristics of the capacitor. These features have been associated to quantized charging and discharging of the nanoparticles and the resulting Coulomb interaction to the tunneling current. © 2005 American Institute of Physics
  6. Keywords:
  7. Annealing ; Coulomb blockade ; Electric currents ; Electron energy loss spectroscopy ; Ion implantation ; MOS capacitors ; Nanostructured materials ; Quantum efficiency ; Temperature distribution ; Transmission electron microscopy ; Nanometer ; Quantum effects ; Room-temperature ; Silicon nanoparticles ; Silicon
  8. Source: Applied Physics Letters ; Volume 86, Issue 16 , 2005 , Pages 1-3 ; 00036951 (ISSN)
  9. URL: https://aip.scitation.org/doi/10.1063/1.1906329