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A fully integrated 0.18-μm CMOS transceiver chip for X-band phased-array systems

Gharibdoust, K ; Sharif University of Technology

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  1. Type of Document: Article
  2. DOI: 10.1109/TMTT.2012.2195020
  3. Abstract:
  4. An X-band core chip is designed and fabricated in 0.18-μm CMOS technology, which can significantly reduce the monolithic microwave integrated circuit count required for realizing an active beam-former T/R module. The core chip consists of two RX/TX paths, each of which includes a 6-b phase shifter, a 6-b attenuator, along with two input and output amplifiers. A new architecture for realizing such a core chip system and a low loss circuit for 5.625° phase shift block are proposed. The overall rms phase and gain errors are better than 2° and 0.25 dB, respectively, in both RX/TX paths. The gain of each path is around 12 dB, while the output 1-dB compression point is higher than 10 dBm over the band of interest
  5. Keywords:
  6. Amplifier ; Phase shifter ; T/R module ; 1dB compression point ; Active beam-former ; Attenuator ; Chip system ; CMOS technology ; CMOS transceivers ; Fully integrated ; Gain errors ; Input and outputs ; T/R modules ; CMOS integrated circuits ; Phase shifters ; Amplifiers (electronic)
  7. Source: IEEE Transactions on Microwave Theory and Techniques ; Volume 60, Issue 7 , 2012 , Pages 2192-2202 ; 00189480 (ISSN)
  8. URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6202388