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A highly-linear dual-gain CMOS low-noise amplifier for X-band

Meghdadi, M ; Sharif University of Technology

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  1. Type of Document: Article
  2. DOI: 10.1109/TCSII.2017.2778311
  3. Abstract:
  4. A highly linear X-band low-noise amplifier (LNA) is proposed and implemented in a standard 0.18-μm CMOS technology. The LNA features both high and low-gain operation modes. In its normal high-gain mode, the LNA shows a small-signal gain of 13.6 dB with an IIP3 of +9.5 dBm and a noise figure of 4.7 dB. The two-stage amplifier draws 90 mA from the 3.3V power supply to achieve +14.8 dBm output P1dB (+2.2 dBm input P1dB). In the low-gain mode, the gain is reduced by about 10 dB to further enhance the linearity and to accommodate very large blockers. Accordingly, the input P1dB is enhanced to +13.7 dBm while the noise figure is increased by 8.1 dB. A technique is also introduced to maintain the input matching when the LNA is switched to operate in the low-gain mode. IEEE
  5. Keywords:
  6. Impedance ; Input matching ; Linearity ; Logic gates ; Amplifiers (electronic) ; CMOS integrated circuits ; Electric impedance ; Impedance matching (electric) ; Noise figure ; Switches ; Turning ; 1dB compression point ; Current steering ; Gain ; Gain switching ; Inductive degeneration ; Input matching ; Low noise amplifiers
  7. Source: IEEE Transactions on Circuits and Systems II: Express Briefs ; 2017 ; 15497747 (ISSN)
  8. URL: https://ieeexplore.ieee.org/document/8123911