Loading...

Circuit-aging modeling based on dynamic MOSFET degradation and its verification

Rohbani, N ; Sharif University of Technology

609 Viewed
  1. Type of Document: Article
  2. DOI: 10.23919/SISPAD.2017.8085273
  3. Abstract:
  4. The reported investigation aims at developing a compact model for circuit-aging simulation. The model considers dynamic trap-density increase during circuit operation in a consistent way. The model has been applied to an SRAM cell, where it is believed that the NBTI effect dominates. Our simulation verifies that the hot-carrier effect has a compensating influence on the NBTI aging of SRAM cells. © 2017 The Japan Society of Applied Physics
  5. Keywords:
  6. Aging ; Hot carrier ; NBTI ; SRAM ; Aging of materials ; Hot carriers ; Negative bias temperature instability ; Semiconductor devices ; Static random access storage ; Timing circuits ; Circuit aging ; Circuit operation ; Hot carrier effect ; MOSFET degradation ; ON dynamics ; SRAM cell ; Trap density
  7. Source: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 7 September 2017 through 9 September 2017 ; Volume 2017-September , 2017 , Pages 97-100 ; 9784863486102 (ISBN)
  8. URL: https://ieeexplore.ieee.org/document/8085273