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High-Photoresponsive backward diode by two-dimensional SnS2/Silicon heterostructure

Hosseini, S. A ; Sharif University of Technology | 2019

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  1. Type of Document: Article
  2. DOI: 10.1021/acsphotonics.8b01626
  3. Publisher: American Chemical Society , 2019
  4. Abstract:
  5. Two-dimensional semiconductor materials can be combined with conventional silicon-based technology and sort out part of the future challenges in semiconductor technologies due to their novel electrical and optical properties. Here, we exploit the optoelectronics property of the silicon/SnS2 heterojunction and present a new class of backward diodes using a straightforward fabrication method. The results indicate an efficient device with fast photoresponse time (5-10 μs), high photoresponsivity (3740 AW-1), and high quantum efficiency (490%). We discuss device behavior by considering the band-to-band tunneling model and band bending characteristics of the heterostructure. This device structure is fully compatible with the semiconductor industry process and allows direct integration with commercial silicon-based technology for novel applications
  6. Keywords:
  7. Band-to-band tunneling ; Photodetector ; SnS2 ; Two-dimensional heterojunction ; IV-VI semiconductors ; Optical properties ; Photodetectors ; Semiconducting silicon ; Semiconducting tin compounds ; Semiconductor device manufacture ; Semiconductor diodes ; Tin compounds ; Band to band tunneling ; Electrical and optical properties ; High quantum efficiency ; Optoelectronics property ; Semiconductor technology ; Silicon-based technology ; SnS2 ; Two-dimensional semiconductors ; Heterojunctions
  8. Source: ACS Photonics ; Volume 6, Issue 3 , 2019 , Pages 728-734 ; 23304022 (ISSN)
  9. URL: https://pubs.acs.org/doi/10.1021/acsphotonics.8b01626