Loading...

Evolution of quantum electronic features with the size of silicon nanoparticles embedded in a sio2 layer obtained by low energy ion implantation

Grisolia, J ; Sharif University of Technology | 2005

577 Viewed
  1. Type of Document: Article
  2. DOI: 10.4028/www.scientific.net/SSP.108-109.71
  3. Publisher: Trans Tech Publications Ltd , 2005
  4. Abstract:
  5. In this paper, we have studied the evolution of quantum electronic features with the size of silicon nanoparticles embedded in an ultra-thin SiO2 layer. These nanoparticles were synthesized by ultralow energy (1 KeV) ion implantation and annealing. Their size was modified using the effect of annealing under slightly oxidizing ambient (N2+O2). Material characterization techniques including transmission electron microscopy (TEM) Fresnel imaging and spatially resolved electron energy loss spectroscopy (EELS) have been used to evaluate the effects of oxidation on structural characteristics of nanocrystal layer. Electrical transport characteristics have been measured on few (less than two hundred) nanoparticles by exploiting a nanoscale MOS capacitor as a probe. Top electrode of this nanoscale capacitor (100 nm x 100 nm) was patterned over the samples by electron-beam nanolithography. Room temperature I-V and I-t characteristics of these structures exhibit discrete current peaks which have been interpreted by quantized charging of the nanoparticles and electrostatic interaction between the trapped charges and the tunneling current. The effects of progressive oxidation on these current features have been studied and discussed. © (2005) Trans Tech Publications, Switzerland
  6. Keywords:
  7. Capacitors ; Defects ; Electron energy levels ; Electron scattering ; Energy dissipation ; High resolution transmission electron microscopy ; Ion implantation ; Nanoparticles ; Semiconductor device manufacture ; Silica ; Silicon ; Silicon oxides ; SiO2 nanoparticles ; Synthesis (chemical) ; Effect of annealing ; Electrical transport characteristics ; Low energy ion implantation ; Material characterization techniques ; Nanoscale capacitors ; Silicon nanoparticles ; Spatially resolved ; Structural characteristics ; Electron energy loss spectroscopy
  8. Source: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2005, 25 September 2005 through 30 September 2005 ; Volume 108-109 , 2005 , Pages 71-76 ; 10120394 (ISSN); 9783908451136 (ISBN)
  9. URL: https://www.scientific.net/SSP.108-109.71